by Ming-Fu Li (Fudan University, China & National University of Singapore, Singapore)

Table of Contents (2,278k)
Preface (455k)
Chapter 1: Introduction (3,602k)

This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering.

• Defects in Semiconductors
• Semiconductor Band Structures
• Analog Integrated Circuit Design
• CMOS Device Reliability
• CMOS Technology
• Nano CMOS Device Quantum Simulation